Fairchild Semiconductor ndt451an free download

File name ndt451an.pdf

February 2009 NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field 7.2A, 30V. RDS(ON) = 0.035 @ VGS = 10V effect transistors are produced using Fairchild's RDS(ON) = 0.05 @ VGS = 4.5V. proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize High density cell design for extremely low RDS(ON). on-state resistance and provide superior switching performance. These devices are particularly suited for low High power and current handling capability in a widely used voltage applications such as DC motor control and DC/DC surface mount package. conversion where fast switching, low in-line power loss, and resistance to transients are needed. ________________________________________________________________________________ D G D S Absolute Maximum Ratings T A= 25